Lesson
The theory — The Diode and the 0.7 V Rule
A diode is a junction that conducts easily one way and hardly at all the other. Over its working range the current is an exponential of the voltage, the Shockley equation: I = IS(eV/(nVT) − 1). Here VT = kT/q is the thermal voltage, 25.69 mV at 25 °C. In a circuit the diode's voltage is not given in advance: it is wherever the diode's curve crosses the line of everything the rest of the circuit allows.
What each symbol means
V_T- the thermal voltage kT/q, in volts. 25.69 mV at 25 °C, and proportional to absolute temperature
I_S- the saturation current, in amperes. Tiny, 10⁻¹⁴ A by default here, and the quantity that decides where along the voltage axis the current becomes large. It grows steeply with temperature
n- the ideality factor, between 1 and 2. It multiplies every voltage step: at n = 2 a tenfold rise in current needs twice the millivolts
E_g- the band gap of silicon, 1.11 eV in this model. It sets how fast I_S grows with temperature, and it is why the drift depends on how far V sits below it
- Assumes
- The ideal Shockley equation and nothing else: no resistance inside the diode, which in a real part bends the curve over at large currents; no reverse breakdown; steady DC. The saturation current and n are model choices, not the data of a named part. The saturation current's growth with temperature follows the SPICE diode model, with a band gap of 1.11 eV and an exponent of 3, so the drift figures on this page are that model's.
Problem solved in full
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Reading a temperature off two currents 6 steps
A diode is run at 10 µA, then at 100 µA. A meter reads 0.477278 V and then 0.541398 V. Nothing is known about the diode except that n = 1. How warm is it?
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Either voltage on its own is no use. It depends on the saturation current, which you do not know, and which in this model is 36 times larger at 50 °C than at 25 °C.
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Subtract the two readings instead. Each is
nVT ln(I/IS), so the difference isnVT ln(I2/I1)and the saturation current cancels, as long as both currents are far above it. -
The difference is 64.120 mV and the current ratio is 10, so VT = 64.120 mV ÷ ln 10 = 27.847 mV.
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Since VT = kT/q, the temperature is T = qVT/k = 323.15 K, which is 50.0 °C.
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Check it on the page: set the temperature to 50 °C. The row for volts per tenfold rise reads 64.12 mV, and the 10 µA and 100 µA rows of the last table read 0.4773 and 0.5414.
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The difference grows by only 0.198 mV per kelvin, about a tenth of what either voltage moves on its own. A difference good to a tenth of a millivolt pins the temperature to half a kelvin, which is why the readings here are given to the microvolt.
Answer
T = 323.15 K, or 50.0 °C, from two readings and n alone. The difference between two junction voltages is proportional to absolute temperature whatever the saturation current is, provided both currents are far above it, so a silicon chip can measure its own temperature with nothing calibrated on it but the ratio of two currents.
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