Lesson
The theory — Transistor Amplifier
A bipolar transistor passes a collector current set by the voltage across its base–emitter junction, IC = ISeVBE/VT, and draws a base current IC/β to do it. In a common-emitter stage the signal goes in at the base and comes out at the collector, where RC turns a changing current into a changing voltage. The operating point is the current and voltage the stage rests at with no signal. The voltage gain is how far a small change at the base moves the collector: A = −gmRC / (1 + gmRE(β+1)/β), with the transconductance gm = IC/VT.
What each symbol means
I_C- collector current, in amperes. The current through RC, and the quantity the bias is designed to pin down
V_BE- base–emitter voltage, in volts. Near 0.65 V for a small transistor at a milliampere, and 60 mV more for every tenfold increase in current
V_T- the thermal voltage kT/q, 25.85 mV at 300 K
β- current gain, IC/IB. A property of the individual transistor, and the number a designer cannot rely on
g_m- transconductance, IC/VT, in siemens. How much the collector current changes per volt across the base–emitter junction
R_E- the emitter resistor, in ohms. It carries the emitter current and feeds part of the input back against itself
- Assumes
- The forward-active Ebers–Moll model with the −1 dropped. β is a constant for the part, and there is no Early effect: the collector current does not depend on VCE, which on a real transistor it does by a few percent per volt. IS = 10⁻¹⁴ A and VT = 25.85 mV are held fixed, so nothing on the page warms up, and real β also drifts with current and temperature. Below VCE = 0.2 V the page calls the transistor saturated and stops treating it as an amplifier; within a period it holds the output on that floor rather than modelling what saturation does. The signal arrives through a coupling capacitor that blocks DC and passes the signal untouched, from a source with no resistance of its own. There is no load on the collector and no bypass capacitor across RE.
Problem solved in full
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Twice the gain, without giving up the stability 6 steps
Same 12 V supply and the same 4.7 kΩ collector resistor, but you need a gain of about −10, and the resting current must stay near 1 mA for any transistor whose β lies between 100 and 300. Choose RE and a new divider.
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The gain is close to −RC/RE, so RE = 4.7 kΩ / 10 = 470 Ω.
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Try that on this page first. With RE at 470 Ω and β at 300 the stage saturates: the resistors ask for 2.2847 mA, which leaves 0.184 V across the transistor. The divider was sized for 1 kΩ under the emitter, and it cannot simply be kept.
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Work backwards from 1 mA. The emitter current is 1.01 mA, so the emitter sits at 1.01 mA × 470 Ω = 0.475 V, and 1 mA needs VBE = 25.85 mV × ln(10⁻³/10⁻¹⁴) = 0.655 V. The base has to be at 1.13 V.
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For β to stop mattering, the divider's own resistance must be small against β·RE, which is 100 × 470 Ω = 47 kΩ at the bottom of the range. Aim for a tenth of that, RTH ≈ 4.7 kΩ. The base current, 10 µA at β = 100, drops 0.047 V across it, so the divider must deliver VTH ≈ 1.18 V.
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R1 = RTH·VCC/VTH = 4.7 kΩ × 12 / 1.18 = 47.8 kΩ and R2 = RTH·VCC/(VCC − VTH) = 5.21 kΩ. The nearest standard values are 47 kΩ and 5.1 kΩ.
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Now solve the finished circuit with the page's model. At β = 100 it rests at 0.9985 mA with a gain of −9.39; at β = 300, 1.0644 mA and −9.48.
Answer
RE = 470 Ω, R1 = 47 kΩ, R2 = 5.1 kΩ. Across β from 100 to 300 the current moves 6.6% and the gain 1.0%, close to what the page's own stage does at half the gain. The page cannot build this circuit, because its divider is fixed, and that is why the problem exists: keeping the page's divider with RE = 470 Ω saturates the stage at β = 300, which is the mistake this problem is set to catch.
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Learning path
What is not a resistor
References (1)
- The β spread insight 1 rests on (DC current gain 100 minimum, 300 maximum at 10 mA for one part number), and the 0.2 V saturation floor the page uses: Diodes Incorporated, "MMBT3904: 40V NPN Small-Signal Transistor in SOT23," datasheet DS30036 Rev. 27-2, March 2025. Electrical Characteristics, p. 4.